| PART |
Description |
Maker |
| U20GL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| DCJ010 1185 |
Silicon Epitaxial Planar Type Diode High-Speed Switching Diode
From old datasheet system
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MA2C185 MA185 |
Silicon epitaxial planar type 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA4X746 |
Silicon epitaxial planar type 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2B345 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| MA2C165 MA165 MA2C167 MA166 MA167 MA2C166 |
Silicon epitaxial planar type 0.1 A, 75 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2C719 |
Silicon epitaxial planar type 0.5 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| KTX401U |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 1SV172 |
Diode Silicon Epitaxial Pin Type
|
TOSHIBA
|
